Resonant Tunneling-Enhanced Photoresponsivity in a Twisted Graphene van der Waals Heterostructure

• Published in: Nano letters 2024-03, Vol.24 (9), p.2870-2875
• Main Authors: Xie, Binghe, Wu, Jiaxin, Mei, Junning, Zhu, Shuangxing, Zhang, Ruan, Gu, Feifan, Watanabe, Kenji, Taniguchi, Takashi, Cai, Xinghan
• Format: Article
• Language: English
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.3c05131

Leveraging its ultrahigh carrier mobility, zero-bandgap linear dispersion, and extremely short response time, graphene exhibits remarkable potential in ultrafast broad-band photodetection. Nonetheless, the inherently low responsivity of graphene photodetectors, due to the low photogenerated carrier density, significantly impedes the development of practical devices. In this study, we present an improved photoresponse within a graphene–hexagonal boron nitride–graphene vertical tunnel junction device, where the crystallographic orientation of the two graphene electrodes is aligned. Through meticulous device structure design and the adjustment of bias and gate voltages, we observe a 2 orders of magnitude increase in tunneling photocurrent, which is attributed to the momentum-conserving resonant electron tunneling. The enhanced external photoresponsivity is evident across a wide temperature and spectral range and achieves 0.7 A/W for visible light excitation. This characteristic, coupled with the device’s negative differential conductance, suggests a novel avenue for highly efficient photodetection and high-frequency, logic-based optoelectronics using van der Waals heterostructures.