Structural and Dielectric Properties of Cubic Fluorite Bi[sub 3]NbO[sub 7] Thin Films As-Deposited at 298 K by PLD for Embedded Capacitor Applications

Cubic fluorite Bi(3)NbO(7) (BNO) thin films were deposited on Cu/polymer and Cu/Si(001) substrates at 298 K by pulsed laser deposition (PLD) for embedded decoupling capacitor applications. The BNO films deposited at 298 K exhibit an amorphous structure and do not show a thickness dependence of a die...

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Published in:Journal of the Electrochemical Society 2006, Vol.153 (10), p.F225-F227
Main Authors: Park, Jong-Hyun, Yoon, Soon-Gil, Kang, Hyung-Dong, Lee, Jeong-Won, Kim, Woon-Chun, Lim, Sung-Taek, Sohn, Seung-Hyun, Moon, Jin-Seok, Jin, Hyun-Ju, Jung, Hyung-Mi, Lee, Seung-Eun, Chung, Yul-Kyo
Format: Article
Language:English
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Summary:Cubic fluorite Bi(3)NbO(7) (BNO) thin films were deposited on Cu/polymer and Cu/Si(001) substrates at 298 K by pulsed laser deposition (PLD) for embedded decoupling capacitor applications. The BNO films deposited at 298 K exhibit an amorphous structure and do not show a thickness dependence of a dielectric constant. The 200 nm thick BNO films exhibit a root-mean-square roughness of 0.7 nm, a dielectric constant of 47, a dielectric loss of 0.6% at 1 MHz, and a leakage current density of approximately 1 x 10(-8) A/cm(2) at 5 V. They show a breakdown strength of about 0.25 MV/cm. The 200 nm thick BNO films deposited at 298 K are suitable for embedded decoupling capacitor applications directly on a printed circuit board.
ISSN:0013-4651
DOI:10.1149/1.2239151