Laser Process Proximity Correction for Improvement of Critical Dimension Linearity on a Photomask

We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule‐based laser process proximity correction (LPC) was performed using an automated optica...

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Bibliographic Details
Published in:ETRI journal 2005-04, Vol.27 (2), p.188-194
Main Authors: Park, Jong Rak, Kim, Hyun Su, Kim, Jin‐Tae, Sung, Moon‐Gyu, Cho, Won‐Il, Choi, Ji‐Hyun, Choi, Sung‐Woon
Format: Article
Language:English
Subjects:
critical dimension linearity
Laser lithography
photomask fabrication
process proximity correction
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Summary:We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule‐based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model‐based LPC was executed using a two‐Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model‐predicted CD linearity data with measured ones. Model‐predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve‐fitting method used for the rule‐based LPC.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.05.0104.0077