MBE growth of reliable high-power lasers with InGaAsP quantum well

Lasers with InGaAsP quantum well were grown on GaAs substrates by solid source MBE with phosphorus-cracker cell. Threshold current density of 290 A/cm 2 and slope efficiency as high as 0.68 W/A per facet were obtained for uncoated laser chips at 25°C. Reliability test was performed, and power degrad...

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Bibliographic Details
Published in:Journal of crystal growth 2004-07, Vol.268 (1), p.8-11
Main Authors: Kuang, G.K, Hernandez, I.C, McElhinney, M, Zeng, L, Caliva, B, Walker, R
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
B2. Semiconducting quaternary alloys
B3. Laser diodes
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Lasers with InGaAsP quantum well were grown on GaAs substrates by solid source MBE with phosphorus-cracker cell. Threshold current density of 290 A/cm 2 and slope efficiency as high as 0.68 W/A per facet were obtained for uncoated laser chips at 25°C. Reliability test was performed, and power degradation rate of less than 3×10 −6/h was obtained for laser bars operating at 47 A.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.04.030