CARRIER TRANSPORTATION OF RAPID THERMAL ANNEALED CeO2 GATE DIELECTRICS

The carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA) was investigated. After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2004-01, Vol.7 (12), p.E55-E57
Main Authors: Wang, J C, Chiang, K C, Lei, T F, Lee, C L
Format: Article
Language:English
Online Access:Get full text
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Summary:The carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA) was investigated. After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunnelling became much more important and the CeO2/n-Si electron barrier height of 0.75 eV was extracted for future modelling and simulation. In addition, the energy band diagram of Al/CeO2/n-Si structure was established for the first time.
ISSN:1099-0062
DOI:10.1149/1.1819855