Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

Temperature characteristics of GaN-based laser diodes are investigated. It is noted that the characteristic temperature of the threshold current (T ) decreases with decreasing lasing wavelength for GaN-based LDs. The performance deteriorates seriously for UV LDs at high temperature. It is ascribed t...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2024-03, Vol.49 (5), p.1305-1308
Main Authors: Yang, Jing, Huang, Yu-Jie, Liu, Zong-Shun, Zhang, Yu-Heng, Liang, Feng, Zhao, De-Gang
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Barrier layers
Gallium nitrides
High temperature
Injection current
Lasing
Potential barriers
Quantum wells
Semiconductor lasers
Threshold currents
Ultraviolet lasers
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature characteristics of GaN-based laser diodes are investigated. It is noted that the characteristic temperature of the threshold current (T ) decreases with decreasing lasing wavelength for GaN-based LDs. The performance deteriorates seriously for UV LDs at high temperature. It is ascribed to the increase of carriers escaping from quantum wells due to the lower potential barrier height. In this Letter, AlGaN is used as the barrier layer in UV LDs instead of GaN to improve the temperature characteristic of the threshold current and slope efficiency by increasing the potential barrier height of quantum wells. Based on this structure, a high output power of 4.6 W is obtained at the injection current of 3.8 A; its lasing wavelength is 386.8 nm.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.515502