Synthesis and field emission properties of aluminum nitride nanocones

• Published in: Applied surface science 2005-09, Vol.251 (1), p.220-224
• Main Authors: Liu, Chun, Hu, Zheng, Wu, Qiang, Wang, Xizhang, Chen, Yi, Lin, Weiwei, Sang, Hai, Deng, Shaozhi, Xu, Ningsheng
• Format: Article
• Language: English
• Subjects: AlN nanocones; Chemical vapor deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Field emission; Physics; Space charge effect; Two-sectional Fowler–Nordheim plot
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2005.03.101

One-dimensional aluminum nitride nanostructures have displayed superior field emission due to the combination of small or negative electron affinity and one-dimensional quantum confinement effect. Herein we report on the synthesis of quasi-aligned AlN nanocones via chemical vapor deposition on the Ni-coated silicon wafer at 750 °C through the reaction between AlCl 3 vapor and NH 3/N 2 gas. The as-prepared hexagonal AlN nanocones grow preferentially along c-axis with the tips’ sizes of about 60 nm and the lengths up to several microns. The field emission measurement exhibits a notable electron emission with the apparent turn-on field of 17.8 V/μm, indicating their potential applications as the field emitters. Due to space charge effect, the corresponding Fowler–Nordheim plot shows a two-sectional characteristic with the field enhancement factors of 1450 and 340 at low and high electric fields, respectively.