Low resistance ohmic contacts to p-Ge(1-x)C(x) onSi

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge(0.9983)C(0.0017) grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from...

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Bibliographic Details
Published in:IEEE electron device letters 1997-01, Vol.18 (1), p.7-9
Main Authors: Shao, Xiaoping, Rommel, S L, Orner, B A, Berger, P R, Kolodzey, J, Unruh, K M
Format: Article
Language:English
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Summary:We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge(0.9983)C(0.0017) grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10(-5)Omicron.;cm(2) to as low as 5.6x10 (-6)Omicron.;cm(2). Theoretical calculations of the contact resistance of metals on Ge(1-x)C(x) with small percentages of carbon, based on the thermionic field emission mechanism of conduction, result in good agreement with the experimental data. We conclude that Al and Au are suitable ohmic contacts to p-Ge(0.9983)C(0.0017) alloys
ISSN:0741-3106
DOI:10.1109/55.553059