A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temper...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-01, Vol.19 (1), p.73-76
Main Authors: Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.
Format: Article
Language:English
Subjects:
Diodes
Electronic structures
Nickel oxide
Resistors
Switches
Titanium oxide
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Summary:A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p‐NiOx/n‐TiOx/Pt diode structure a promising switch element for high‐ density, nonvolatile memory devices with 3D stack and cross‐point structures.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601025