Low frequency noise in InGaN/GaN MQW-based photodetector structures

Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/f ‐type noise was examined in MQW PDs as a function of reverse bias, In content and temperature. Superposed multilevel Random Telegraph Signal Noise was observed under reverse and...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-01, Vol.204 (1), p.262-266
Main Authors: Navarro, A., Rivera, C., Cuerdo, R., Pau, J. L., Pereiro, J., Muñoz, E.
Format: Article
Language:English
Subjects:
72.70.+m
73.40.Kp
73.61.Ey
73.63.Hs
85.60.Gz
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/f ‐type noise was examined in MQW PDs as a function of reverse bias, In content and temperature. Superposed multilevel Random Telegraph Signal Noise was observed under reverse and forward biases. The dominant presence of this type of noise in MQW PCs seems to indicate that its origin was related to localization effects in the InGaN QWs. Detectivity of the MQW PDs was determined at various voltages for a wide range of temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200673548