TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane

The deformation microstructure of single crystals of 4H-SiC resulting from microindentations on a prismatic surface was investigated by TEM. Indentations were performed at 400 and 675°C, i.e. below the brittle to ductile transition temperature of 4H-SiC (temperature close to 1100°C). TEM analysis re...

Full description

Saved in:
Bibliographic Details
Published in:Philosophical magazine letters 2006-09, Vol.86 (9), p.561-568
Main Authors: Mussi, A., Demenet, J. L., Rabier, J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Physics
Stacking faults and other planar or extended defects
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The deformation microstructure of single crystals of 4H-SiC resulting from microindentations on a prismatic surface was investigated by TEM. Indentations were performed at 400 and 675°C, i.e. below the brittle to ductile transition temperature of 4H-SiC (temperature close to 1100°C). TEM analysis reveals dissociated dislocations as well as extended stacking faults in the basal plane. In addition, perfect edge dislocations are observed on prismatic planes. From the observations, it is assumed that perfect dislocations are nucleated in the prismatic plane and cross-slip on the basal one where they dissociate.
ISSN:0950-0839
1362-3036
DOI:10.1080/09500830600930198