Magnetoresistive hybrid transistor in vertical architecture

We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fl...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2005-11, Vol.202 (14), p.R158-R160
Main Authors: Meruvia, M. S., Benvenho, A. R. V., Hümmelgen, I. A., Gomez, J. A., Graeff, C. F. O., Li, R. W. C., Aguiar, L. H. J. M. C., Gruber, J.
Format: Article
Language:English
Subjects:
75.47.Pq
81.07.Pr
85.30.De
85.70.Kh
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143
cites cdi_FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143
container_end_page R160
container_issue 14
container_start_page R158
container_title Physica status solidi. A, Applications and materials science
container_volume 202
creator Meruvia, M. S.
Benvenho, A. R. V.
Hümmelgen, I. A.
Gomez, J. A.
Graeff, C. F. O.
Li, R. W. C.
Aguiar, L. H. J. M. C.
Gruber, J.
description We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssa.200521270
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29357999</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29357999</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143</originalsourceid><addsrcrecordid>eNqFkL1PwzAQxSMEEqWwMmeBLcUfcWyLqVRQEAUqFcRouc6ZGtKk2Gmh_z2pUhU2pjudfu-d3ouiU4x6GCFysQhB9whCjGDC0V7UwSIjSUax3N_tCB1GRyG8I5SylONOdPmg30qoKw_BhdqtIJ6tp97lce11uTlVPnZlvAJfO6OLWHszczWYeunhODqwughwsp3d6OXm-nlwm4yehneD_igxVAiUUMs5spByi4URQvBpaoGJjEoKQI0VyGS5SXOeZ9SkmqSSGJNTMm3wPMMp7Ubnre_CV59LCLWau2CgKHQJ1TIoIinjUsoG7LWg8VUIHqxaeDfXfq0wUpuO1KYjteuoEZxtnXVo0tkms3HhV8WJQEywhpMt9-UKWP_jqsaTSf_vj6TVNmXC906r_YfKOOVMvT4OlaTyio0nRN3TH0uuiAQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29357999</pqid></control><display><type>article</type><title>Magnetoresistive hybrid transistor in vertical architecture</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Meruvia, M. S. ; Benvenho, A. R. V. ; Hümmelgen, I. A. ; Gomez, J. A. ; Graeff, C. F. O. ; Li, R. W. C. ; Aguiar, L. H. J. M. C. ; Gruber, J.</creator><creatorcontrib>Meruvia, M. S. ; Benvenho, A. R. V. ; Hümmelgen, I. A. ; Gomez, J. A. ; Graeff, C. F. O. ; Li, R. W. C. ; Aguiar, L. H. J. M. C. ; Gruber, J.</creatorcontrib><description>We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6300</identifier><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1862-6319</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.200521270</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>75.47.Pq ; 81.07.Pr ; 85.30.De ; 85.70.Kh ; Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Physica status solidi. A, Applications and materials science, 2005-11, Vol.202 (14), p.R158-R160</ispartof><rights>Copyright © 2005 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143</citedby><cites>FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17280585$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Meruvia, M. S.</creatorcontrib><creatorcontrib>Benvenho, A. R. V.</creatorcontrib><creatorcontrib>Hümmelgen, I. A.</creatorcontrib><creatorcontrib>Gomez, J. A.</creatorcontrib><creatorcontrib>Graeff, C. F. O.</creatorcontrib><creatorcontrib>Li, R. W. C.</creatorcontrib><creatorcontrib>Aguiar, L. H. J. M. C.</creatorcontrib><creatorcontrib>Gruber, J.</creatorcontrib><title>Magnetoresistive hybrid transistor in vertical architecture</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>phys. stat. sol. (a)</addtitle><description>We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>75.47.Pq</subject><subject>81.07.Pr</subject><subject>85.30.De</subject><subject>85.70.Kh</subject><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>1862-6300</issn><issn>0031-8965</issn><issn>1862-6319</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkL1PwzAQxSMEEqWwMmeBLcUfcWyLqVRQEAUqFcRouc6ZGtKk2Gmh_z2pUhU2pjudfu-d3ouiU4x6GCFysQhB9whCjGDC0V7UwSIjSUax3N_tCB1GRyG8I5SylONOdPmg30qoKw_BhdqtIJ6tp97lce11uTlVPnZlvAJfO6OLWHszczWYeunhODqwughwsp3d6OXm-nlwm4yehneD_igxVAiUUMs5spByi4URQvBpaoGJjEoKQI0VyGS5SXOeZ9SkmqSSGJNTMm3wPMMp7Ubnre_CV59LCLWau2CgKHQJ1TIoIinjUsoG7LWg8VUIHqxaeDfXfq0wUpuO1KYjteuoEZxtnXVo0tkms3HhV8WJQEywhpMt9-UKWP_jqsaTSf_vj6TVNmXC906r_YfKOOVMvT4OlaTyio0nRN3TH0uuiAQ</recordid><startdate>200511</startdate><enddate>200511</enddate><creator>Meruvia, M. S.</creator><creator>Benvenho, A. R. V.</creator><creator>Hümmelgen, I. A.</creator><creator>Gomez, J. A.</creator><creator>Graeff, C. F. O.</creator><creator>Li, R. W. C.</creator><creator>Aguiar, L. H. J. M. C.</creator><creator>Gruber, J.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200511</creationdate><title>Magnetoresistive hybrid transistor in vertical architecture</title><author>Meruvia, M. S. ; Benvenho, A. R. V. ; Hümmelgen, I. A. ; Gomez, J. A. ; Graeff, C. F. O. ; Li, R. W. C. ; Aguiar, L. H. J. M. C. ; Gruber, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>75.47.Pq</topic><topic>81.07.Pr</topic><topic>85.30.De</topic><topic>85.70.Kh</topic><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meruvia, M. S.</creatorcontrib><creatorcontrib>Benvenho, A. R. V.</creatorcontrib><creatorcontrib>Hümmelgen, I. A.</creatorcontrib><creatorcontrib>Gomez, J. A.</creatorcontrib><creatorcontrib>Graeff, C. F. O.</creatorcontrib><creatorcontrib>Li, R. W. C.</creatorcontrib><creatorcontrib>Aguiar, L. H. J. M. C.</creatorcontrib><creatorcontrib>Gruber, J.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meruvia, M. S.</au><au>Benvenho, A. R. V.</au><au>Hümmelgen, I. A.</au><au>Gomez, J. A.</au><au>Graeff, C. F. O.</au><au>Li, R. W. C.</au><au>Aguiar, L. H. J. M. C.</au><au>Gruber, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoresistive hybrid transistor in vertical architecture</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>2005-11</date><risdate>2005</risdate><volume>202</volume><issue>14</issue><spage>R158</spage><epage>R160</epage><pages>R158-R160</pages><issn>1862-6300</issn><issn>0031-8965</issn><eissn>1862-6319</eissn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.200521270</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1862-6300
ispartof Physica status solidi. A, Applications and materials science, 2005-11, Vol.202 (14), p.R158-R160
issn 1862-6300
0031-8965
1862-6319
1521-396X
language eng
recordid cdi_proquest_miscellaneous_29357999
source Wiley-Blackwell Read & Publish Collection
subjects 75.47.Pq
81.07.Pr
85.30.De
85.70.Kh
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Magnetoresistive hybrid transistor in vertical architecture
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T20%3A42%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Magnetoresistive%20hybrid%20transistor%20in%20vertical%20architecture&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Meruvia,%20M.%20S.&rft.date=2005-11&rft.volume=202&rft.issue=14&rft.spage=R158&rft.epage=R160&rft.pages=R158-R160&rft.issn=1862-6300&rft.eissn=1862-6319&rft.coden=PSSABA&rft_id=info:doi/10.1002/pssa.200521270&rft_dat=%3Cproquest_cross%3E29357999%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3880-3f770fe47f18c8887b4fe586393ee3cf80c6dc4d7d63c4a2492ccd32b18cd6143%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29357999&rft_id=info:pmid/&rfr_iscdi=true