Loading…
Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
We have measured micro-photoluminescence (PL) spectra of nitrogen delta ( δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained...
Saved in:
Published in: | Journal of crystal growth 2007, Vol.298, p.73-75 |
---|---|
Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We have measured micro-photoluminescence (PL) spectra of nitrogen delta (
δ)-doped GaAs with various concentrations. In nitrogen
δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen
δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1
μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices. |
---|---|
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2006.10.019 |