Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth 2007, Vol.298, p.73-75
• Main Authors: Endo, Y., Tanioka, K., Hijikata, Y., Yaguchi, H., Yoshida, S., Yoshita, M., Akiyama, H., Ono, W., Nakajima, F., Katayama, R., Onabe, K.
• Format: Article
• Language: English
• Subjects: A1. Doping optical microscopy; A2. Metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other semiconductors; Photoluminescence; Physics; Specific materials; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.10.019

We have measured micro-photoluminescence (PL) spectra of nitrogen delta ( δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.