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Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
We have measured micro-photoluminescence (PL) spectra of nitrogen delta ( δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained...
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| Published in: | Journal of crystal growth 2007, Vol.298, p.73-75 |
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| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c439t-303b72dc9657f1926c17801786a6281c2fe05fee764b5340bb91b291edb0eb43 |
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| cites | cdi_FETCH-LOGICAL-c439t-303b72dc9657f1926c17801786a6281c2fe05fee764b5340bb91b291edb0eb43 |
| container_end_page | 75 |
| container_issue | |
| container_start_page | 73 |
| container_title | Journal of crystal growth |
| container_volume | 298 |
| creator | Endo, Y. Tanioka, K. Hijikata, Y. Yaguchi, H. Yoshida, S. Yoshita, M. Akiyama, H. Ono, W. Nakajima, F. Katayama, R. Onabe, K. |
| description | We have measured micro-photoluminescence (PL) spectra of nitrogen delta (
δ)-doped GaAs with various concentrations. In nitrogen
δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen
δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1
μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices. |
| doi_str_mv | 10.1016/j.jcrysgro.2006.10.019 |
| format | article |
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δ)-doped GaAs with various concentrations. In nitrogen
δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen
δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1
μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2006.10.019</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping optical microscopy ; A2. Metalorganic vapor phase epitaxy ; B2. Semiconducting III–V materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other semiconductors ; Photoluminescence ; Physics ; Specific materials ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2007, Vol.298, p.73-75</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-303b72dc9657f1926c17801786a6281c2fe05fee764b5340bb91b291edb0eb43</citedby><cites>FETCH-LOGICAL-c439t-303b72dc9657f1926c17801786a6281c2fe05fee764b5340bb91b291edb0eb43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,4024,4050,4051,23930,23931,25140,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18578697$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Endo, Y.</creatorcontrib><creatorcontrib>Tanioka, K.</creatorcontrib><creatorcontrib>Hijikata, Y.</creatorcontrib><creatorcontrib>Yaguchi, H.</creatorcontrib><creatorcontrib>Yoshida, S.</creatorcontrib><creatorcontrib>Yoshita, M.</creatorcontrib><creatorcontrib>Akiyama, H.</creatorcontrib><creatorcontrib>Ono, W.</creatorcontrib><creatorcontrib>Nakajima, F.</creatorcontrib><creatorcontrib>Katayama, R.</creatorcontrib><creatorcontrib>Onabe, K.</creatorcontrib><title>Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy</title><title>Journal of crystal growth</title><description>We have measured micro-photoluminescence (PL) spectra of nitrogen delta (
δ)-doped GaAs with various concentrations. In nitrogen
δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen
δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1
μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.</description><subject>A1. Doping optical microscopy</subject><subject>A2. Metalorganic vapor phase epitaxy</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other semiconductors</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkM1OxCAUhYnRxHH0FQwb3XW80Ja2O43xL9G4cU8o3M4w6ZQKjNq3l8loXLoAkptzOPd8hJwzWDBg4mq9WGs_haV3Cw4g0nABrDkgM1ZXeVYC8EMySzfPgBf1MTkJYQ2QnAxmxLxY7V02rlx0_XZjBwwaB400xK2ZqOvoYKN3SxyowT6qzLgRDX1QN4GmxM-BthPdYFS980s1WE0_1Og8HVcqIMXRRvU1nZKjTvUBz37eOXm7v3u7fcyeXx-ebm-eM13kTcxyyNuKG92IsupYw4VmVQ3pCCV4zTTvEMoOsRJFW-YFtG3DWt4wNC1gW-Rzcrn_dvTufYshyo1NbfpeDei2QfImLxMSkYRiL0zVQ_DYydHbjfKTZCB3TOVa_jKVO6a7eWKajBc_CSpo1XdeDdqGP3ddpmWbKumu9zpMbT8sehm03WE11qOO0jj7X9Q3lNeSJg</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>Endo, Y.</creator><creator>Tanioka, K.</creator><creator>Hijikata, Y.</creator><creator>Yaguchi, H.</creator><creator>Yoshida, S.</creator><creator>Yoshita, M.</creator><creator>Akiyama, H.</creator><creator>Ono, W.</creator><creator>Nakajima, F.</creator><creator>Katayama, R.</creator><creator>Onabe, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2007</creationdate><title>Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy</title><author>Endo, Y. ; Tanioka, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Yoshita, M. ; Akiyama, H. ; Ono, W. ; Nakajima, F. ; Katayama, R. ; Onabe, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-303b72dc9657f1926c17801786a6281c2fe05fee764b5340bb91b291edb0eb43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. Doping optical microscopy</topic><topic>A2. Metalorganic vapor phase epitaxy</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other semiconductors</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Endo, Y.</creatorcontrib><creatorcontrib>Tanioka, K.</creatorcontrib><creatorcontrib>Hijikata, Y.</creatorcontrib><creatorcontrib>Yaguchi, H.</creatorcontrib><creatorcontrib>Yoshida, S.</creatorcontrib><creatorcontrib>Yoshita, M.</creatorcontrib><creatorcontrib>Akiyama, H.</creatorcontrib><creatorcontrib>Ono, W.</creatorcontrib><creatorcontrib>Nakajima, F.</creatorcontrib><creatorcontrib>Katayama, R.</creatorcontrib><creatorcontrib>Onabe, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Endo, Y.</au><au>Tanioka, K.</au><au>Hijikata, Y.</au><au>Yaguchi, H.</au><au>Yoshida, S.</au><au>Yoshita, M.</au><au>Akiyama, H.</au><au>Ono, W.</au><au>Nakajima, F.</au><au>Katayama, R.</au><au>Onabe, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy</atitle><jtitle>Journal of crystal growth</jtitle><date>2007</date><risdate>2007</risdate><volume>298</volume><spage>73</spage><epage>75</epage><pages>73-75</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We have measured micro-photoluminescence (PL) spectra of nitrogen delta (
δ)-doped GaAs with various concentrations. In nitrogen
δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen
δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1
μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2006.10.019</doi><tpages>3</tpages></addata></record> |
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| source | ScienceDirect Freedom Collection 2022-2024 |
| subjects | A1. Doping optical microscopy A2. Metalorganic vapor phase epitaxy B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other semiconductors Photoluminescence Physics Specific materials Vapor phase epitaxy growth from vapor phase |
| title | Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy |
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