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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Raman spectra of In 0.80Ga 0.20As/(AlAs)/AlAs 056Sb 0.44 quantum wells (QWs) grown on (0 0 1)-InP substrates by molecular beam epitaxy were measured in backscattering along Z | | [ 0 0 1 ] and x | | [ 1 1 0 ] directions, i.e. from (0 0 1) grown and (1 1 0) cleaved surfaces, with microprobes. Confine...

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Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1), p.178-182
Main Authors: Mozume, T., Kasai, J.
Format: Article
Language:English
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Summary:Raman spectra of In 0.80Ga 0.20As/(AlAs)/AlAs 056Sb 0.44 quantum wells (QWs) grown on (0 0 1)-InP substrates by molecular beam epitaxy were measured in backscattering along Z | | [ 0 0 1 ] and x | | [ 1 1 0 ] directions, i.e. from (0 0 1) grown and (1 1 0) cleaved surfaces, with microprobes. Confined longitudinal-optic (LO) and transverse-optic (TO) phonons with wave vector q either parallel or normal to the Z axis were studied in all the independent scattering geometries. The Raman scattering spectra from (0 0 1) surfaces show two-mode behavior in the InGaAs band, while single mode behavior is confirmed in the AlAsSb band, consistent with the previous results. The GaAs-like LO- phonon peak splits into two peaks that can be attributed to the confined GaAs-like LO-phonon mode and the intermediate frequency plasmon-LO-phonon coupled mode. A drastic change in the Raman spectra is observed when the transferred momentum is changed from the Z-axis to x-axis. The Raman spectra in the x ( Zy ) x ¯ geometry are dominated by TO-confined phonons, whereas LO-confined phonons are dominated in the x ( ZZ ) x ¯ geometry, consistent with the selection rules, although in other configurations no signals are observed inconsistent with the selection rules.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.072