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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy
Raman spectra of In 0.80Ga 0.20As/(AlAs)/AlAs 056Sb 0.44 quantum wells (QWs) grown on (0 0 1)-InP substrates by molecular beam epitaxy were measured in backscattering along Z | | [ 0 0 1 ] and x | | [ 1 1 0 ] directions, i.e. from (0 0 1) grown and (1 1 0) cleaved surfaces, with microprobes. Confine...
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Published in: | Journal of crystal growth 2005-05, Vol.278 (1), p.178-182 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Raman spectra of In
0.80Ga
0.20As/(AlAs)/AlAs
056Sb
0.44 quantum wells (QWs) grown on (0
0
1)-InP substrates by molecular beam epitaxy were measured in backscattering along
Z
|
|
[
0
0
1
]
and
x
|
|
[
1
1
0
]
directions, i.e. from (0
0
1) grown and (1
1
0) cleaved surfaces, with microprobes. Confined longitudinal-optic (LO) and transverse-optic (TO) phonons with wave vector
q either parallel or normal to the
Z axis were studied in all the independent scattering geometries. The Raman scattering spectra from (0
0
1) surfaces show two-mode behavior in the InGaAs band, while single mode behavior is confirmed in the AlAsSb band, consistent with the previous results. The GaAs-like LO- phonon peak splits into two peaks that can be attributed to the confined GaAs-like LO-phonon mode and the intermediate frequency plasmon-LO-phonon coupled mode. A drastic change in the Raman spectra is observed when the transferred momentum is changed from the
Z-axis to
x-axis. The Raman spectra in the
x
(
Zy
)
x
¯
geometry are dominated by TO-confined phonons, whereas LO-confined phonons are dominated in the
x
(
ZZ
)
x
¯
geometry, consistent with the selection rules, although in other configurations no signals are observed inconsistent with the selection rules. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.12.072 |