Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene

The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors can be improved dramatically by a simple and straightforward solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces stru...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2006-07, Vol.18 (13), p.1721-1726
Main Authors: Dickey, K. C., Anthony, J. E., Loo, Y.-L.
Format: Article
Language:English
Subjects:
Electronics
organic
Semiconductors
Semiconductors, organic
Transistors
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Summary:The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors can be improved dramatically by a simple and straightforward solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200600188