Ohmic contacts to n-type GaSb and n-type GalnAsSb

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GalnAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples were fabricated into mesa-etched, transfer-length...

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Bibliographic Details
Published in:Journal of electronic materials 2004-11, Vol.33 (11), p.1406-1410
Main Authors: Huang, Robin K., Wang, Christine A., Harris, Christopher T., Connors, Michael K., Shiau, Daniel A.
Format: Article
Language:English
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Summary:An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GalnAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples were fabricated into mesa-etched, transfer-length method (TLM) structures, and the specific-contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific-contact resistivities of about 2 X 10(-6) Omega-cm2 and sheet resistances of about 4 Omega/D are found for n-type GalnAsSb doped at about 3 X 10(18) cm(-3)
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0171-1