Loading…

Influence of the annealing conditions on the properties of InP thin films

InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-07, Vol.131 (1), p.94-99
Main Authors: Öztaş, M., Bedir, M., Kayalı, R., Aksoy, F.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73
cites cdi_FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73
container_end_page 99
container_issue 1
container_start_page 94
container_title Materials science & engineering. B, Solid-state materials for advanced technology
container_volume 131
creator Öztaş, M.
Bedir, M.
Kayalı, R.
Aksoy, F.
description InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of annealing time. The optical band-gap shows a dependence with the inverse of the squared crystallite size, suggesting that electron confinement has some effect. The lattice parameter and band-gap energy (BGE) of the samples annealed at 450 °C for 160 min (20–40–80–120–160–200) correspond to the reported values of InP thin films. In addition, the electrical resistivity measurement shows a slight decrease when annealing time is increased up to 80 min but it saturates annealing times between 80 and 160 min. Then it is slightly increased for larger times.
doi_str_mv 10.1016/j.mseb.2006.03.033
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29400818</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S092151070600211X</els_id><sourcerecordid>29400818</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK7-AU89eWudJP1IwIuIH4UFPeg5pOlEs7TJmnQF_72t61l4YWDmfYeZh5BLCgUFWl9vizFhVzCAugA-ix-RFRUNz0tZlsdkBZLRvKLQnJKzlLYAQBljK9K23g579AazYLPpAzPtPerB-ffMBN-7yQWfsuB_Z7sYdhgnh2lxt_5l7jqfWTeM6ZycWD0kvPira_L2cP9695Rvnh_bu9tNbjinU97IuhQcKg7cYNUbXmNPudYCaNVh3RuBVcm7Emxna9E1FmspUWqpGxDSNnxNrg5752M-95gmNbpkcBi0x7BPiskSQFAxG9nBaGJIKaJVu-hGHb8VBbVQU1u1UFMLNQV8Fp9DN4cQzi98OYwqGbfg6V1EM6k-uP_iP0OfdcU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29400818</pqid></control><display><type>article</type><title>Influence of the annealing conditions on the properties of InP thin films</title><source>ScienceDirect Journals</source><creator>Öztaş, M. ; Bedir, M. ; Kayalı, R. ; Aksoy, F.</creator><creatorcontrib>Öztaş, M. ; Bedir, M. ; Kayalı, R. ; Aksoy, F.</creatorcontrib><description>InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of annealing time. The optical band-gap shows a dependence with the inverse of the squared crystallite size, suggesting that electron confinement has some effect. The lattice parameter and band-gap energy (BGE) of the samples annealed at 450 °C for 160 min (20–40–80–120–160–200) correspond to the reported values of InP thin films. In addition, the electrical resistivity measurement shows a slight decrease when annealing time is increased up to 80 min but it saturates annealing times between 80 and 160 min. Then it is slightly increased for larger times.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2006.03.033</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Annealing ; InP ; Spray pyrolysis ; Structural properties ; Thin film</subject><ispartof>Materials science &amp; engineering. B, Solid-state materials for advanced technology, 2006-07, Vol.131 (1), p.94-99</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73</citedby><cites>FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Öztaş, M.</creatorcontrib><creatorcontrib>Bedir, M.</creatorcontrib><creatorcontrib>Kayalı, R.</creatorcontrib><creatorcontrib>Aksoy, F.</creatorcontrib><title>Influence of the annealing conditions on the properties of InP thin films</title><title>Materials science &amp; engineering. B, Solid-state materials for advanced technology</title><description>InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of annealing time. The optical band-gap shows a dependence with the inverse of the squared crystallite size, suggesting that electron confinement has some effect. The lattice parameter and band-gap energy (BGE) of the samples annealed at 450 °C for 160 min (20–40–80–120–160–200) correspond to the reported values of InP thin films. In addition, the electrical resistivity measurement shows a slight decrease when annealing time is increased up to 80 min but it saturates annealing times between 80 and 160 min. Then it is slightly increased for larger times.</description><subject>Annealing</subject><subject>InP</subject><subject>Spray pyrolysis</subject><subject>Structural properties</subject><subject>Thin film</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AU89eWudJP1IwIuIH4UFPeg5pOlEs7TJmnQF_72t61l4YWDmfYeZh5BLCgUFWl9vizFhVzCAugA-ix-RFRUNz0tZlsdkBZLRvKLQnJKzlLYAQBljK9K23g579AazYLPpAzPtPerB-ffMBN-7yQWfsuB_Z7sYdhgnh2lxt_5l7jqfWTeM6ZycWD0kvPira_L2cP9695Rvnh_bu9tNbjinU97IuhQcKg7cYNUbXmNPudYCaNVh3RuBVcm7Emxna9E1FmspUWqpGxDSNnxNrg5752M-95gmNbpkcBi0x7BPiskSQFAxG9nBaGJIKaJVu-hGHb8VBbVQU1u1UFMLNQV8Fp9DN4cQzi98OYwqGbfg6V1EM6k-uP_iP0OfdcU</recordid><startdate>20060715</startdate><enddate>20060715</enddate><creator>Öztaş, M.</creator><creator>Bedir, M.</creator><creator>Kayalı, R.</creator><creator>Aksoy, F.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20060715</creationdate><title>Influence of the annealing conditions on the properties of InP thin films</title><author>Öztaş, M. ; Bedir, M. ; Kayalı, R. ; Aksoy, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Annealing</topic><topic>InP</topic><topic>Spray pyrolysis</topic><topic>Structural properties</topic><topic>Thin film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Öztaş, M.</creatorcontrib><creatorcontrib>Bedir, M.</creatorcontrib><creatorcontrib>Kayalı, R.</creatorcontrib><creatorcontrib>Aksoy, F.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science &amp; engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Öztaş, M.</au><au>Bedir, M.</au><au>Kayalı, R.</au><au>Aksoy, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the annealing conditions on the properties of InP thin films</atitle><jtitle>Materials science &amp; engineering. B, Solid-state materials for advanced technology</jtitle><date>2006-07-15</date><risdate>2006</risdate><volume>131</volume><issue>1</issue><spage>94</spage><epage>99</epage><pages>94-99</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of annealing time. The optical band-gap shows a dependence with the inverse of the squared crystallite size, suggesting that electron confinement has some effect. The lattice parameter and band-gap energy (BGE) of the samples annealed at 450 °C for 160 min (20–40–80–120–160–200) correspond to the reported values of InP thin films. In addition, the electrical resistivity measurement shows a slight decrease when annealing time is increased up to 80 min but it saturates annealing times between 80 and 160 min. Then it is slightly increased for larger times.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2006.03.033</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0921-5107
ispartof Materials science & engineering. B, Solid-state materials for advanced technology, 2006-07, Vol.131 (1), p.94-99
issn 0921-5107
1873-4944
language eng
recordid cdi_proquest_miscellaneous_29400818
source ScienceDirect Journals
subjects Annealing
InP
Spray pyrolysis
Structural properties
Thin film
title Influence of the annealing conditions on the properties of InP thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T03%3A52%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20the%20annealing%20conditions%20on%20the%20properties%20of%20InP%20thin%20films&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=%C3%96zta%C5%9F,%20M.&rft.date=2006-07-15&rft.volume=131&rft.issue=1&rft.spage=94&rft.epage=99&rft.pages=94-99&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/j.mseb.2006.03.033&rft_dat=%3Cproquest_cross%3E29400818%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c331t-79648305303ce5dc36ed13aa8015be6dc8e543b40fbf68b7fe699e9a9a7089f73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29400818&rft_id=info:pmid/&rfr_iscdi=true