Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In 0.23Ga 0.77N/GaN multiquantum well (MQW) light-emitting diodes (LE...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-09, Vol.112 (1), p.10-13
Main Authors: Liu, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Wu, L.W., Lin, C.C.
Format: Article
Language:English
Subjects:
GaN
LED
Low temperature
MQW
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In 0.23Ga 0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800 °C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800 °C-grown p-GaN cap layer.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2004.05.003