High-Quality CVD SiO2 interfacial layer prepared by cyclic deposition with O2 plasma treatment

We have developed a new process, cyclic deposition with O2 plasma treatment (C-DOP), to obtain a high-quality interfacial layer (IL) that can be applied to low-temperature poly-Si thin-film transistors (TFTs). The C-DOP process uses sequential deposition followed by O2 plasma treatment. By increasin...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2006-07, Vol.153 (7), p.G636-G639
Main Authors: Hamamura, Hirotaka, Matsumura, Mieko, Mine, Toshiyuki, Torii, Kazuyoshi
Format: Article
Language:English
Online Access:Get full text
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Summary:We have developed a new process, cyclic deposition with O2 plasma treatment (C-DOP), to obtain a high-quality interfacial layer (IL) that can be applied to low-temperature poly-Si thin-film transistors (TFTs). The C-DOP process uses sequential deposition followed by O2 plasma treatment. By increasing radio frequency power during O2 plasma treatment, the SiO2 film becomes denser, and the density of the C-DOP-formed SiO2 becomes close to that of thermal oxide. The amounts of residual impurities, such as OH, H, and C, are decreased by the C-DOP process. We applied the C-DOP process to form a thin IL. It is effective in suppressing the flatband voltage shift (OmegaV(FB)) due to Fowler-Nordheim negative stress when the IL thickness is more than 5 nm. By applying the C-DOP-formed EL to poly-Si TFTs, drain-current degradation due to drain-avalanche hot-carrier stress is successfully suppressed, and the time to 10% reduction of the drain current is prolonged by 1 order of magnitude.
ISSN:0013-4651
DOI:10.1149/1.2197651