Model for minority carrier lifetimes in doped HgCdTe

We calculate the radiative, Auger, and the Shockley-Read-Hall recombination rates with Fermi-Dirac statistics and accurate band structures to explain the measured temperature dependence and doping dependence of minority carrier lifetimes in three n- and one p-type sample. We show that a trap state t...

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Bibliographic Details
Published in:Journal of electronic materials 2005-06, Vol.34 (6), p.873-879
Main Authors: KRISHNAMURTHY, S, BERDING, M. A, YU, Z. G, SWARTZ, C. H, MYERS, T. H, EDWALL, D. D, DEWAMES, R
Format: Article
Language:English
Subjects:
Applied sciences
Auger spectroscopy
Band structure
Conductivity
Electronics
Exact sciences and technology
Materials
Temperature
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Summary:We calculate the radiative, Auger, and the Shockley-Read-Hall recombination rates with Fermi-Dirac statistics and accurate band structures to explain the measured temperature dependence and doping dependence of minority carrier lifetimes in three n- and one p-type sample. We show that a trap state tracking the conduction band edge with very small activation energy can explain the lifetimes in the n-doped samples considered here. Similarly, for moderately p-doped HgCdTe alloy, a trap level at 75 meV is needed to explain the observed lifetimes. In either case, movement of Fermi level with respect to the trap level explains the temperature dependence of the lifetimes. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0035-3