MOVPE process for horizontal reactors with reduced parasitic deposition

In this paper we report on a new MOVPE process for horizontal reactors in which care was taken to avoid the contact of group III source with the heated reactor walls. This effectively reduces parasitic deposition and leads to higher reproducibility and higher uptimes of the reactor without maintenan...

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Bibliographic Details
Published in:Journal of crystal growth 2004-12, Vol.272 (1), p.407-414
Main Authors: Hardtdegen, H., Kaluza, N., Steins, R., Schmidt, R., Wirtz, K., Yakovlev, E.V., Talalaev, R.A., Makarov, Yu.N.
Format: Article
Language:English
Subjects:
A1. Modeling
A3. Metalorganic vapor phase epitaxy
A3. Parasitic deposition
B1. Nitrides
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Theory and models of film growth
Vapor phase epitaxy
growth from vapor phase
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Summary:In this paper we report on a new MOVPE process for horizontal reactors in which care was taken to avoid the contact of group III source with the heated reactor walls. This effectively reduces parasitic deposition and leads to higher reproducibility and higher uptimes of the reactor without maintenance. A comparison between the standard and the new process for GaN growth is made. Results of modeling and experiments are presented.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.08.131