Non-linear emissions of MOVPE ZnSe epilayers

Non-linear photoluminescence emissions of n-type ZnSe epitaxial layers grown by MOVPE have been studied at low temperature. The processes involved in the spectra of photoluminescence in highly excited ZnSe epilayers are assumed to be a combination of exciton–exciton (P-bands) and electron exciton co...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-07, Vol.131 (1), p.177-180
Main Authors: Chergui, A., Samah, M., Bouguerra, M., Guerbous, L.
Format: Article
Language:English
Subjects:
Epilayer
Non-linear
ZnSe
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Summary:Non-linear photoluminescence emissions of n-type ZnSe epitaxial layers grown by MOVPE have been studied at low temperature. The processes involved in the spectra of photoluminescence in highly excited ZnSe epilayers are assumed to be a combination of exciton–exciton (P-bands) and electron exciton collisions (M-band). Recombination processes by inelastic collisions of free excitons are then predominant. They are the principal processes of stimulated emission.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2006.04.007