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Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs
Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FETs) are realized on (3 1 1)A InP V-groove substrates by selective molecular beam epitaxy. Negative differential resistance (NDR) spectra are clearly observed in the 50–240 K temperature range for the In 0.7Ga 0.3As...
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Published in: | Journal of crystal growth 2005-05, Vol.278 (1), p.94-97 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FETs) are realized on (3
1
1)A InP V-groove substrates by selective molecular beam epitaxy. Negative differential resistance (NDR) spectra are clearly observed in the 50–240
K temperature range for the In
0.7Ga
0.3As QWR-FET, and up to 260
K for the In
0.8Ga
0.2As QWR-FET. These temperature ranges are higher than that of a lattice-matched QWR-FET, and this is thought to be due to the higher electron mobility in the pseudomorphic QWR layer. The NDR temperature range increases as the QWR In content increases and the FET gate length decreases. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.12.116 |