Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FETs) are realized on (3 1 1)A InP V-groove substrates by selective molecular beam epitaxy. Negative differential resistance (NDR) spectra are clearly observed in the 50–240 K temperature range for the In 0.7Ga 0.3As...

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Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1), p.94-97
Main Authors: Sugaya, T., Yamane, T., Ogura, M., Komori, K., Yonei, K.
Format: Article
Language:English
Subjects:
A1. Low-dimensional structure
A1. Nanostructures
A1. Negative differential resistance
A3. Molecular beam epitaxy
A3. Selective epitaxy
Applied sciences
B1. Pseudomorphic InGaAs
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Field effect devices
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FETs) are realized on (3 1 1)A InP V-groove substrates by selective molecular beam epitaxy. Negative differential resistance (NDR) spectra are clearly observed in the 50–240 K temperature range for the In 0.7Ga 0.3As QWR-FET, and up to 260 K for the In 0.8Ga 0.2As QWR-FET. These temperature ranges are higher than that of a lattice-matched QWR-FET, and this is thought to be due to the higher electron mobility in the pseudomorphic QWR layer. The NDR temperature range increases as the QWR In content increases and the FET gate length decreases.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.116