Anomalous Anisotropic Etching of (111) and (100) Silicon Wafers Using Acidic Solutions

We report anisotropic chemical wet etching of < 111 > and (100) silicon wafers using an acidic solution. The etching is performed using a solution consisting of hexafluorosilicic acid (H2SiF6) and nitric acid. For silicon samples with < 111 > orientation, the etching results in the forma...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2006-01, Vol.153 (7), p.G721-G725
Main Authors: Famini, S., Esfandyarpour, B., Mohajerzadeh, S.
Format: Article
Language:English
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Summary:We report anisotropic chemical wet etching of < 111 > and (100) silicon wafers using an acidic solution. The etching is performed using a solution consisting of hexafluorosilicic acid (H2SiF6) and nitric acid. For silicon samples with < 111 > orientation, the etching results in the formation of crystallographic features with hexagonal openings. The walls of the crater are assumed to be different < 111 > planes with their crossing with < 211 > planes. Extended periods of etching result in the formation of scale-repeated features resembling the fractal structures. Etching of a < 100 > silicon was also been examined, which indicated the evolution of concave corners and < 111 > and < 331 > planes.
ISSN:0013-4651
DOI:10.1149/1.2202099