An RDS, LEED, and STM Study of MOCVD-Prepared Si(1 0 0) surfaces

Clean, As- and P-terminated Si(1 0 0) surfaces were prepared with H 2 carrier gas and AsH 3 and PH 3 as precursors in an MOCVD chamber. Reflectance difference spectra (RDS) were taken in situ. Samples were then transferred under vacuum to an ultrahigh-vacuum (UHV) chamber for analysis with AES, LEED...

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Bibliographic Details
Published in:Journal of crystal growth 2004-12, Vol.272 (1), p.24-29
Main Authors: Hannappel, T., McMahon, W.E., Olson, J.M.
Format: Article
Language:English
Subjects:
A1. Adsorption
A1. Reflectance difference spectroscopy
A1. Scanning tunneling microscopy
A3. Metalorganic chemical vapor deposition
B2. Semiconducting III–V materials
B2. Semiconducting silicon
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Summary:Clean, As- and P-terminated Si(1 0 0) surfaces were prepared with H 2 carrier gas and AsH 3 and PH 3 as precursors in an MOCVD chamber. Reflectance difference spectra (RDS) were taken in situ. Samples were then transferred under vacuum to an ultrahigh-vacuum (UHV) chamber for analysis with AES, LEED, and STM. Clean, As-terminated Si(1 0 0) surfaces were achieved by annealing the sample at T
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.08.043