Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing

The kinetics of the p-to-n conversion and effect of the anomalous n-to-p reconversion of p-CdTe during annealing at 400-700°C under Cd-rich overpressure have been investigated. The p-to-n conversion is related to diffusion of Cd interstitials together with gettering of foreign fast diffusing accepto...

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Bibliographic Details
Published in:Journal of electronic materials 2005-06, Vol.34 (6), p.957-962
Main Authors: BELAS, E, FRANC, J, GRILL, R, TOTH, A. L, HORODYSKY, P, MORAVEC, P, HÖSCHL, P
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Diffusion
Electronics
Exact sciences and technology
Kinetics
Luminescence
Materials
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Transport properties of condensed matter (nonelectronic)
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Summary:The kinetics of the p-to-n conversion and effect of the anomalous n-to-p reconversion of p-CdTe during annealing at 400-700°C under Cd-rich overpressure have been investigated. The p-to-n conversion is related to diffusion of Cd interstitials together with gettering of foreign fast diffusing acceptors to the center of the sample. The propagation of the n-type layer during annealing at 500°C was found to be significantly slower then the standard square-root dependence on annealing time. The anomalous n-to-p reconversion of the converted n-type sample was observed after sufficient long time annealing at 600°C. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0050-4