PRE-ANNEALING EFFECTS ON AL METALLIZATION PROPERTIES IN HIGH DENSITY FeRAM DEVICE

Metallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La) 4 Ti 3 O 12 /Pt ferroelectric capacitor. The metal-1 films were deposited on both the Pt top ele...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-11, Vol.81 (1), p.113-122
Main Authors: CHO, K. W., CHOI, J. H., YU, H. S., KWEON, S. Y., YEOM, S. J., KIM, N. K., CHOI, E. S., SUN, H. J., HONG, S. K., HONG, T. W., KIM, I. H., LEE, J. I., UR, S. C., LEE, Y. G., RYU, S. L., CHOI, S. K.
Format: Article
Language:English
Subjects:
Al metallization process
High density FeRAM
pre-annealing
sputtering method
tungsten oxidation
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Summary:Metallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La) 4 Ti 3 O 12 /Pt ferroelectric capacitor. The metal-1 films were deposited on both the Pt top electrode and the W bit-line after fabricating the contact holes. The contact filling behaviors of the metal-1 layers were mainly depended on the pre-annealing condition performed before depositing the metal-1 layers. The optimized pre-annealing conditions was 400°C/N 2 /30 min on W bit-line. From the result, a 16 Mb FeRAM device was successfully developed.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580600659910