Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, repres...

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Published in:Journal of materials research 2006-09, Vol.21 (9), p.2241-2245
Main Authors: Gan, Z.H., Shao, W., Mhaisalkar, S.G., Chen, Z., Li, Hongyu, Tu, K.N., Gusak, A.M.
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Language:English
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Electromigration
Scanning electron microscopy (SEM)
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cited_by cdi_FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593
cites cdi_FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593
container_end_page 2245
container_issue 9
container_start_page 2241
container_title Journal of materials research
container_volume 21
creator Gan, Z.H.
Shao, W.
Mhaisalkar, S.G.
Chen, Z.
Li, Hongyu
Tu, K.N.
Gusak, A.M.
description Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.
doi_str_mv 10.1557/jmr.2006.0270
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29440272</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cupid>10_1557_jmr_2006_0270</cupid><sourcerecordid>29288121</sourcerecordid><originalsourceid>FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593</originalsourceid><addsrcrecordid>eNqNkUFv1DAQRiMEEkvhyN0nbtnajh07R1rBUqkVYlvOluOMFy-JvYy9hf57vGoFJyROMxq9mZG-1zRvGV0zKdX5fsE1p7RfU67os2bFqRCt7Hj_vFlRrUXLByZeNq9y3lPKJFVi1eAWMuB9CkjAe3CF2DiR8g0IphlI8mROP4k7IkIsZIKYQ3kgCLuQYiYpEpjrEqYl7NCWOiRz8FDCApmESFw6HABrVwBdirGy-XXzwts5w5unetZ8_fjh7vJTe_15c3X5_rp1QnSltXpwYMU4aE77UTPrRhCcCzbxHkYumVR6VFZIP3k79rz3k1RiGFmnLNNy6M6ad493D5h-HCEXs4TsYJ5thHTMhg9C1KT4f4Bca8ZZBdtH0GHKGcGbA4bF4oNh1JwUmKrAnBSYk4K_fMgFfv2BLX43veqUNP3mi7nb3l5sbzc35qLy50_37TJimHZg9umIsab0jw-_AffFmuw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29288121</pqid></control><display><type>article</type><title>Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects</title><source>Springer Nature</source><creator>Gan, Z.H. ; Shao, W. ; Mhaisalkar, S.G. ; Chen, Z. ; Li, Hongyu ; Tu, K.N. ; Gusak, A.M.</creator><creatorcontrib>Gan, Z.H. ; Shao, W. ; Mhaisalkar, S.G. ; Chen, Z. ; Li, Hongyu ; Tu, K.N. ; Gusak, A.M.</creatorcontrib><description>Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.</description><identifier>ISSN: 0884-2914</identifier><identifier>EISSN: 2044-5326</identifier><identifier>DOI: 10.1557/jmr.2006.0270</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><subject>Electromigration ; Scanning electron microscopy (SEM)</subject><ispartof>Journal of materials research, 2006-09, Vol.21 (9), p.2241-2245</ispartof><rights>Copyright © Materials Research Society 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593</citedby><cites>FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Gan, Z.H.</creatorcontrib><creatorcontrib>Shao, W.</creatorcontrib><creatorcontrib>Mhaisalkar, S.G.</creatorcontrib><creatorcontrib>Chen, Z.</creatorcontrib><creatorcontrib>Li, Hongyu</creatorcontrib><creatorcontrib>Tu, K.N.</creatorcontrib><creatorcontrib>Gusak, A.M.</creatorcontrib><title>Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects</title><title>Journal of materials research</title><addtitle>J. Mater. Res</addtitle><description>Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.</description><subject>Electromigration</subject><subject>Scanning electron microscopy (SEM)</subject><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkUFv1DAQRiMEEkvhyN0nbtnajh07R1rBUqkVYlvOluOMFy-JvYy9hf57vGoFJyROMxq9mZG-1zRvGV0zKdX5fsE1p7RfU67os2bFqRCt7Hj_vFlRrUXLByZeNq9y3lPKJFVi1eAWMuB9CkjAe3CF2DiR8g0IphlI8mROP4k7IkIsZIKYQ3kgCLuQYiYpEpjrEqYl7NCWOiRz8FDCApmESFw6HABrVwBdirGy-XXzwts5w5unetZ8_fjh7vJTe_15c3X5_rp1QnSltXpwYMU4aE77UTPrRhCcCzbxHkYumVR6VFZIP3k79rz3k1RiGFmnLNNy6M6ad493D5h-HCEXs4TsYJ5thHTMhg9C1KT4f4Bca8ZZBdtH0GHKGcGbA4bF4oNh1JwUmKrAnBSYk4K_fMgFfv2BLX43veqUNP3mi7nb3l5sbzc35qLy50_37TJimHZg9umIsab0jw-_AffFmuw</recordid><startdate>20060901</startdate><enddate>20060901</enddate><creator>Gan, Z.H.</creator><creator>Shao, W.</creator><creator>Mhaisalkar, S.G.</creator><creator>Chen, Z.</creator><creator>Li, Hongyu</creator><creator>Tu, K.N.</creator><creator>Gusak, A.M.</creator><general>Cambridge University Press</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7SP</scope><scope>H8G</scope><scope>L7M</scope></search><sort><creationdate>20060901</creationdate><title>Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects</title><author>Gan, Z.H. ; Shao, W. ; Mhaisalkar, S.G. ; Chen, Z. ; Li, Hongyu ; Tu, K.N. ; Gusak, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Electromigration</topic><topic>Scanning electron microscopy (SEM)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gan, Z.H.</creatorcontrib><creatorcontrib>Shao, W.</creatorcontrib><creatorcontrib>Mhaisalkar, S.G.</creatorcontrib><creatorcontrib>Chen, Z.</creatorcontrib><creatorcontrib>Li, Hongyu</creatorcontrib><creatorcontrib>Tu, K.N.</creatorcontrib><creatorcontrib>Gusak, A.M.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Copper Technical Reference Library</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gan, Z.H.</au><au>Shao, W.</au><au>Mhaisalkar, S.G.</au><au>Chen, Z.</au><au>Li, Hongyu</au><au>Tu, K.N.</au><au>Gusak, A.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects</atitle><jtitle>Journal of materials research</jtitle><addtitle>J. Mater. Res</addtitle><date>2006-09-01</date><risdate>2006</risdate><volume>21</volume><issue>9</issue><spage>2241</spage><epage>2245</epage><pages>2241-2245</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.</abstract><cop>New York, USA</cop><pub>Cambridge University Press</pub><doi>10.1557/jmr.2006.0270</doi><tpages>5</tpages></addata></record>
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subjects Electromigration
Scanning electron microscopy (SEM)
title Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T12%3A01%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reservoir%20effect%20and%20the%20role%20of%20low%20current%20density%20regions%20on%20electromigration%20lifetimes%20in%20copper%20interconnects&rft.jtitle=Journal%20of%20materials%20research&rft.au=Gan,%20Z.H.&rft.date=2006-09-01&rft.volume=21&rft.issue=9&rft.spage=2241&rft.epage=2245&rft.pages=2241-2245&rft.issn=0884-2914&rft.eissn=2044-5326&rft_id=info:doi/10.1557/jmr.2006.0270&rft_dat=%3Cproquest_cross%3E29288121%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c443t-a89cea4b98206b81acbe42241d26eb251578b7a45fdfab626fd5749b137a18593%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29288121&rft_id=info:pmid/&rft_cupid=10_1557_jmr_2006_0270&rfr_iscdi=true