Silicon nanoparticles in thermally annealed thin silicon monoxide films

Thin vacuum-evaporated SiO x films with embedded Si nanoparticles are studied by applying spectral ellipsometry and transmission electron microscopy. The Si nano-inclusions in the oxide matrix were formed by thermal annealing in argon at 700 and 1000 °C for 5 and 30 min, respectively. The results ha...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-12, Vol.124, p.504-507
Main Authors: Szekeres, A., Nikolova, T., Paneva, A., Cziraki, A., Kovacs, Gy. J., Lisovskyy, I., Mazunov, D., Indutnyy, I., Shepeliavyi, P.
Format: Article
Language:English
Subjects:
Nano-sized Si clusters
Spectral ellipsometry
Transmission electron microscopy
Vacuum evaporated SiO
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Summary:Thin vacuum-evaporated SiO x films with embedded Si nanoparticles are studied by applying spectral ellipsometry and transmission electron microscopy. The Si nano-inclusions in the oxide matrix were formed by thermal annealing in argon at 700 and 1000 °C for 5 and 30 min, respectively. The results have shown that during annealing the films undergo densification, and Si nano-clusters with averaged size of 3 nm are formed in amorphous phase at 700 °C and in crystalline phase at 1000 °C.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2005.08.124