Interface-Controlled, High-Mobility Organic Transistors

The achievement of high mobilities in field‐effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single‐crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulatio...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-03, Vol.19 (5), p.688-692
Main Authors: Jurchescu, O. D., Popinciuc, M., van Wees, B. J., Palstra, T. T. M.
Format: Article
Language:English
Subjects:
Charge-carrier mobility
Field-effect transistors
organic
Organic electronics
Pentacenes
Semiconductors
Semiconductors, organic
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Summary:The achievement of high mobilities in field‐effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single‐crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200600929