Investigation of electrical conductivity in Schottky-barrier devices based on nickel phthalocyanine thin films

Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified...

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Bibliographic Details
Published in:Journal of alloys and compounds 2007-03, Vol.430 (1), p.194-199
Main Authors: El-Nahass, M.M., Abd El-Rahman, K.F.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical conductivity
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
NiPc thin films
Physics
Schottky-barrier
SCLC conduction
Surface double layers, schottky barriers, and work functions
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Summary:Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified at low and higher voltages respectively. After annealing, a strong rectifying effect was observed. The potential barrier height and the depletion region width for annealed sample were calculated as 0.96 eV and 70 nm, respectively. Hole and trap parameters for as prepared and after annealing devices, also, were evaluated.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2006.04.056