Pr2O3/Si(0 0 1) interface reactions and stability

We show that an interfacial silicate is formed in a natural way between Si(001) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide arguments from results of ab initio calculations and we pres...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.30-33
Main Authors: Schmeioer, Dieter, Dabrowski, Jarek, Mussig, Hans-Joachim
Format: Article
Language:English
Subjects:
Ab initio calculations
CMOS
High-k-material
Photoelectron spectroscopy
Pr2O3/Si interface
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Summary:We show that an interfacial silicate is formed in a natural way between Si(001) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide arguments from results of ab initio calculations and we present a ternary phase diagram of the Pr–O–Si system obtained for epitaxial films from non-destructive depth profiling data acquired by synchrotron radiation and photoelectron spectroscopy (SR-PES) at the undulator beam line U49/2-PGM2. The composition of the interfacial layer is (Pr2O3)(SiO)x(SiO2)y, with x+y between 2 and 6 and depends on the growth condition and distance from the substrate. No interfacial SiO2 and no interfacial silicide is formed during growth. The ternary phase diagram indicates that this non-stoichiometric pseudobinary alloy is stable on Si up to high temperatures, without phase separation into Pr2O3 and SiO2. Therefore, a complete re-engineering of the CMOS process may be not necessary.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2003.10.086