InP based lasers and optical amplifiers with wire-/dot-like active regions

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mum. In a brief overview different technological approaches will be...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2005-07, Vol.38 (13), p.2088-2102
Main Authors: Reithmaier, J P, Somers, A, Deubert, S, Schwertberger, R, Kaiser, W, Forchel, A, Calligaro, M, Resneau, P, Parillaud, O, Bansropun, S, Krakowski, M, Alizon, R, Hadass, D, Bilenca, A, Dery, H, Mikhelashvili, V, Eisenstein, G, Gioannini, M, Montrosset, I, Berg, T W, van der Poel, M, Mørk, J, Tromborg, B
Format: Article
Language:English
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Summary:Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mum. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/38/13/004