The performance of Ge2Sb2Te5 material for PCRAM device

The performance of Nonvolatile phase-change-memory material Ge2Sb2Te5 and nitrogen doped Ge2Sb2Te5 as well as its device cell was investigated. The effects of the annealing temperature on the resistivity and crystal structure of the Ge2Sb2Te5 were studied. The Hall measurement shows the hole mobilit...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-01, Vol.78, p.261-270
Main Authors: Ling, Yun, Lin, Yinyin, Lai, Lianzhang, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Tang, Ting'ao, Cai, Bingchu, Chen, Bomy
Format: Article
Language:English
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Summary:The performance of Nonvolatile phase-change-memory material Ge2Sb2Te5 and nitrogen doped Ge2Sb2Te5 as well as its device cell was investigated. The effects of the annealing temperature on the resistivity and crystal structure of the Ge2Sb2Te5 were studied. The Hall measurement shows the hole mobility decreased with the changing of film thickness from 10 nm. to 100 nm The GST resistivity can be increased effectively by doping nitrogen and the decrease of the film thickness. The high resistive GST is indispensable to minimize threshold voltage of PCRAM.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580600663375