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Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth by computational simulation

We report the major growth pathways of GaN metalorganic vapor‐phase epitaxial growth from a TMGa/NH3/H2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH4 from TMGa:NH3 adducts (TMGa:NH3 → DMGaNH2 → MMGaNH → Ga–N → Growth),...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2006-05, Vol.203 (7), p.1716-1719
Main Authors: Hirako, A., Koiso, S., Ohkawa, K.
Format: Article
Language:English
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Summary:We report the major growth pathways of GaN metalorganic vapor‐phase epitaxial growth from a TMGa/NH3/H2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH4 from TMGa:NH3 adducts (TMGa:NH3 → DMGaNH2 → MMGaNH → Ga–N → Growth), and the second major growth pathway is due to GaNH2 molecules sublimated from GaN layer. [Ga–N]n was generated by polymerization of Ga–N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200565211