New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates

Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presen...

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Main Authors: Boltovets, N S, Dugaev, V K, Kholevchuk, V V, McDonald, P C, Mitin, V F, Nemish, I Yu, Pavese, F, Peroni, I, Sorokin, P V, Soloviev, E A, Venger, E F
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program.
ISSN:0094-243X
DOI:10.1063/1.1627158