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New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates
Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presen...
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creator | Boltovets, N S Dugaev, V K Kholevchuk, V V McDonald, P C Mitin, V F Nemish, I Yu Pavese, F Peroni, I Sorokin, P V Soloviev, E A Venger, E F |
description | Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program. |
doi_str_mv | 10.1063/1.1627158 |
format | conference_proceeding |
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ispartof | Temperature: Its Measurement and Control in Science and Industry; Volume 7, Part 1, 2003, Vol.684, p.399-404 |
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language | eng |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
title | New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates |
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