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New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates

Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presen...

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Main Authors: Boltovets, N S, Dugaev, V K, Kholevchuk, V V, McDonald, P C, Mitin, V F, Nemish, I Yu, Pavese, F, Peroni, I, Sorokin, P V, Soloviev, E A, Venger, E F
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creator Boltovets, N S
Dugaev, V K
Kholevchuk, V V
McDonald, P C
Mitin, V F
Nemish, I Yu
Pavese, F
Peroni, I
Sorokin, P V
Soloviev, E A
Venger, E F
description Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program.
doi_str_mv 10.1063/1.1627158
format conference_proceeding
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title New Generation of Resistance Thermometers Based on Ge Films on GaAs Substrates
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