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Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the ma...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2006-01, Vol.203 (1), p.158-161
Main Authors: Ruterana, P., Abouzaid, M., Gloux, F., Maciej, W., Doualan, J. L., Drago, M., Schmidtling, T., Pohl, U. W., Richter, W.
Format: Article
Language:English
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Summary:In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
1521-396X
DOI:10.1002/pssa.200563518