The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide–silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device life...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-12, Vol.124, p.458-461
Main Authors: Nazarov, A.N., Vovk, J.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W., Yankov, R.A.
Format: Article
Language:English
Subjects:
Electroluminescent properties
Metal-oxide–semiconductor (MOS) devices
Plasma treatment
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Summary:We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide–silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining unchanged the intensity of the light emission in the violet portion of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses, and bond rearrangement that leads to a decrease in generation efficiency of electron traps, which are responsible for the device degradation.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2005.08.045