Phase separation in InAlAs grown by MOVPE with a low growth temperature

We describe herein a phase separation of InAlAs on an InP substrate grown at a low temperature in terms of carbon doping. Phase separation of the InAlAs bulk material appeared below the growth temperature of 580 °C and this was enhanced with decrease in the growth temperature. At 550 °C, the phase s...

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Bibliographic Details
Published in:Journal of crystal growth 2004-11, Vol.271 (3), p.341-347
Main Authors: Kurihara, K., Takashima, M., Sakata, K., Ueda, R., Takahara, M., Ikeda, H., Namita, H., Nakamura, T., Shimoyama, K.
Format: Article
Language:English
Subjects:
A1. High angle annular dark field
A1. Phase separation
A1. Transmission electron microscopy
B1. InAlAs alloys
B2. Semiconducting III–V materials
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Solubility, segregation, and mixing
phase separation
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Summary:We describe herein a phase separation of InAlAs on an InP substrate grown at a low temperature in terms of carbon doping. Phase separation of the InAlAs bulk material appeared below the growth temperature of 580 °C and this was enhanced with decrease in the growth temperature. At 550 °C, the phase separation drastically increased and was accompanied with surface corrugations. However, when the growth temperature was lower than 550 °C, the surface corrugation was again suppressed and flatness was recovered. An accumulation of In atoms was observed in the valleys between the columns in corrugations by using a scanning transmission electron microscope with high-angle annular dark field and energy dispersive X-ray analysis. Photo-luminescence revealed an InAlGaAs/InAlGaAs multi-quantum well sample with corrugations showing an abnormal red-shift compared to that found with higher growth temperature. This result can be well explained if the changes in the well thickness are attributed to In accumulation. In conclusion, carbon doping at higher temperatures where phase separation does not occur, is the most suitable for fabricating devices.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.07.054