Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er

• Published in: Journal of crystal growth 2004-04, Vol.265 (1), p.78-82
• Main Authors: Song, S.F, Chen, W.D, Zhu, Jianjun, Hsu, C.C
• Format: Article
• Language: English
• Subjects: A1. Defects; A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B2. Semiconducting gallium compounds; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Structure of solids and liquids; crystallography
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.01.056

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al 2O 3 substrate at room temperature (RT) and 400°C. Both random (10° tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin films were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction.