Characterization of Ba(Zr0.05 Ti0.95)O3 thin film prepared by sol-gel process

• Published in: Journal of electroceramics 2006-07, Vol.16 (4), p.523-526
• Main Authors: Cheng, W X, Ding, A L, He, X Y, Zheng, X S, Qiu, P S
• Format: Article
• Language: English
• Subjects: Dielectric properties; Thin films
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-006-9910-4

Issue Title: Special Issue: Symposium on Functional Ceramic Materials and Thin Films of ICMAT 2005: Part I July 2006 Ba(Zr^sub 0.05^Ti^sub 0.95^)O^sub 3^ (BZT) thin film (330 nm) was grown on Pt/Ti/SiO^sub 2^/Si(100) substrate by a simple sol-gel process. The microstructure and the surface morphology of BZT thin film were studied by X-ray diffraction and atomic force microscopy. The optical properties of BZT thin film were obtained by spectroscopic ellipsometry. The optical bandgap was found to be 3.74 eV of direct-transition type. Ferroelectric and dielectric properties of BZT thin film were also discussed. The electrical measurements were conducted on BZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The results showed the film exhibited good ferroelectrity with remanent polarization and coercive electric field of 3.54 μC/cm^sup 2^ and 95.5 kV/cm, respectively. At 10 kHz, the dielectric constant and dielectric loss of the film are 201 and 0.029, respectively.[PUBLICATION ABSTRACT]