Piezoelectric Gated Diode of a Single ZnO Nanowire

A ZnO nanowire behaves like a rectifier under bending strain, as demonstrated by its current–voltage characteristics (see graph). This is interpreted with the consideration of a piezoelectricity‐induced potential energy barrier at the interface of the conductive tip and nanowire (see schematic). Und...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-03, Vol.19 (6), p.781-784
Main Authors: He, J. H., Hsin, C. L., Liu, J., Chen, L. J., Wang, Z. L.
Format: Article
Language:English
Subjects:
inorganic
Junction diodes
Nanowire arrays
Nanowire diodes
Nanowires
Nanowires, inorganic
Piezoelectrics
Rectifiers
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Summary:A ZnO nanowire behaves like a rectifier under bending strain, as demonstrated by its current–voltage characteristics (see graph). This is interpreted with the consideration of a piezoelectricity‐induced potential energy barrier at the interface of the conductive tip and nanowire (see schematic). Under appropriate bending and voltage control, each NW could correspond to a device element for random‐access‐memory, diode, and force‐sensor applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601908