Reduction of etch pits of electropolished Cu by additives

In this study, the significant reduction of etch pits on electropolished copper surfaces was demonstrated using polyethylene glycol (PEG) and sulfuric acid as oxygen suppressors in 85 wt% phosphoric acid (H3PO4). PEG adsorbed on the copper surfaces (increasing charge-transfer resistance) and sulfuri...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004, Vol.151 (7), p.C459-C462
Main Authors: SHIEH, Jia-Min, CHANG, Shih-Chieh, WANG, Ying-Lang, DAI, Bau-Tong, CHENG, Shih-Song, TING, Jack
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Physics
Surface treatments
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Summary:In this study, the significant reduction of etch pits on electropolished copper surfaces was demonstrated using polyethylene glycol (PEG) and sulfuric acid as oxygen suppressors in 85 wt% phosphoric acid (H3PO4). PEG adsorbed on the copper surfaces (increasing charge-transfer resistance) and sulfuric acid increased solution acidity (enhancing viscous layer resistance) which resulted in polishing electrolytes with characteristics of decline in the reaction current but enhancement in the overpotential of oxygen formation, finally eliminating those defects.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1757461