Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity o...

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Bibliographic Details
Published in:Key engineering materials 2006-12, Vol.326-328, p.609-612
Main Authors: Moon, Chang Youl, Hwang, Jun Sik, Choa, Sung Hoon, Kim, Woon Bae, Wang, Qian, Ham, Suk Jin
Format: Article
Language:English
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Summary:In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.326-328.609