Argon plasma modelling in a RF magnetron sputtering system

Argon plasma properties in a radio-frequency magnetron sputtering system have been studied, both theoretically and experimentally. A model of the plasma sheath has been developed in order to study the current–voltage relation in the plasma. This model takes into account the plasma magnetization and...

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Bibliographic Details
Published in:Surface & coatings technology 2004-11, Vol.188, p.392-398
Main Authors: Palmero, A., van Hattum, E.D., Arnoldbik, W.M., Habraken, F.H.P.M.
Format: Article
Language:English
Subjects:
Magnetron
Plasma simulation and modelling
Reactive sputtering
Silicon oxide
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Summary:Argon plasma properties in a radio-frequency magnetron sputtering system have been studied, both theoretically and experimentally. A model of the plasma sheath has been developed in order to study the current–voltage relation in the plasma. This model takes into account the plasma magnetization and the secondary electron emission from the cathode. These results have been compared with experimental data obtained by a Langmuir probe in a magnetron sputtering system used to deposit silicon sub-oxide thin films. Finally, a proof of the intrinsic relation between the ion current at the cathode and the deposition rate has been shown, finding a linear relation between these two quantities.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2004.08.032