Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates

• Published in: Journal of crystal growth 2006-10, Vol.296 (1), p.11-14
• Main Authors: Kumagai, Yoshinao, Satoh, Fumitaka, Togashi, Rie, Murakami, Hisashi, Takemoto, Kikurou, Iihara, Junji, Yamaguchi, Koji, Koukitu, Akinori
• Format: Article
• Language: English
• Subjects: A1. Doping; A2. Growth from vapor; A3. Hydride vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure of solids and liquids; crystallography; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.08.027

An Fe-doped thick GaN layer was grown by hydride vapor-phase epitaxy on a (1 1 1)A GaAs starting substrate. By removing the GaAs substrate, a 400-μm-thick (0 0 0 1) GaN substrate having a smooth surface and an Fe concentration of 1.5×10 19 cm −3 was obtained. X-ray diffraction rocking curves of the (0 0 0 2) and (1 0 1 ¯ 0) planes of the GaN substrate had narrow full-widths at half-maximum of 410 and 360 arcsec, respectively. The etch-pit density of the GaN substrate was 8×10 6 cm −2. Extended X-ray absorption fine structure analysis revealed that the Fe atoms are substituting for the Ga in the GaN. The GaN substrate had a high resistivity of 8.8×10 12 Ω cm at room temperature.